? semiconductor components industries, llc, 2006 april, 2006 ? rev. 0 1 publication order number: ntgf3123p/d ntgf3123p power mosfet and schottky diode 20 v, 2.5 a, p ? channel with schottky barrier diode, tsop ? 6 dual features ? fetky ? p ? channel and schottky diode ? small size (3 x 3 mm) dual tsop ? 6 package ? leading edge trench technology for low on resistance ? low v f schottky diode ? common drain/cathode for ease of board layout ? this is a pb ? free device applications ? dc ? dc converters; configured as asynchronous buck ? portable devices like pda?s, cellular phones, and hard drives maximum ratings (t j = 25 c unless otherwise noted) parameter symbol value unit drain ? to ? source voltage v dss 20 v gate ? to ? source voltage v gs 12 v continuous drain current (note 1) steady state t a = 25 c i d 2.3 a t a = 85 c 1.6 t 5 s t a = 25 c 2.5 power dissipation (note 1) steady state t a = 25 c p d 1.1 w t 5 s 1.3 continuous drain current (note 2) steady state t a = 25 c i d 1.7 a t a = 85 c 1.2 power dissipation (note 2) t a = 25 c p d 0.56 w pulsed drain current t p = 10 s i dm 6.9 a operating junction and storage temperature t j , t stg ? 25 to 150 c source current (body diode) (note 2) i s 0.9 a lead temperature for soldering purposes (1/8 from case for 10 s) t l 260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. surface mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [2 oz] including traces). both die on. 2. surface mounted on fr4 board using the minimum recommended pad size (cu area = 0.0465 in sq [2 oz] including traces). both die on. 1 2 3 6 5 4 a s g k/d k/d k/d http://onsemi.com 20 v 20 v 200 m @ 2.5 v 145 m @ 4.5 v 1.0 a r ds(on) max 2.5 a 0.40 v i d max (note 1) v (br)dss mosfet schottky diode v r max i f max v f typ g s p ? channel mosfet d k a schottky diode s6 = specific device code m = date code = pb ? free package (note: microdot may be in either location) tsop6 case 318g marking diagram (top view) see detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. ordering information pin connection s6 m 1 1
ntgf3123p http://onsemi.com 2 schottky diode maximum ratings (t j = 25 c unless otherwise noted) parameter symbol value unit peak repetitive reverse voltage v rrm 20 v dc blocking voltage v r 20 v average rectified forward current i f 1.0 a thermal resistance ratings parameter symbol max unit both die on junction ? to ? ambient ? steady state (note 3) r ja 115 c/w junction ? to ? ambient ? t 5 s (note 3) r ja 95 junction ? to ? ambient ? steady state (note 4) r ja 225 one die on junction ? to ? ambient ? steady state (note 3) r ja 225 c/w junction ? to ? ambient ? t 5 s (note 3) r ja 125 junction ? to ? ambient ? steady state (note 4) r ja 305 3. surface mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [2 oz] including traces). 4. surface mounted on fr4 board using the minimum recommended pad size (cu area = 30 mm sq [2 oz] including traces). mosfet electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics drain ? to ? source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 20 v drain ? to ? source breakdown voltage temperature coefficient v (br)dss /t j 14.4 mv/ c zero gate voltage drain current i dss v ds = 16 v, v gs = 0 v t j = 25 c 1.0 a t j = 125 c 10 gate ? to ? source leakage current i gss v ds = 0 v, v gs = 12 v 100 na on characteristics (note 5) gate threshold voltage v gs(th) v gs = v ds , i d = 250 a 0.6 1.2 1.4 v gate threshold temperature coefficient v gs(th) /t j 3.2 mv/ c drain ? to ? source on ? resistance r ds(on) v gs = 4.5, i d = 2.0 a 95 145 m v gs = 2.5, i d = 1.7 a 150 200 forward transconductance g fs v ds = ? 5.0 v, i d = ? 2.5 a 4.0 s charges, capacitances and gate resistance input capacitance c iss v gs = 0 v, f = 1.0 mhz, v ds = ? 10 v 390 pf output capacitance c oss 75 reverse transfer capacitance c rss 37 total gate charge q g(tot) v gs = ? 4.5 v, v ds = ? 10 v, i d = ? 2.2 a 3.7 5.5 nc threshold gate charge q g(th) 0.7 gate ? to ? source charge q gs 1.1 gate ? to ? drain charge q gd 1.2 5. pulse test: pulse width 300 s, duty cycle 2%.
ntgf3123p http://onsemi.com 3 mosfet electrical characteristics (t j = 25 c unless otherwise noted) parameter unit max typ min test conditions symbol switching characteristics (note 6) turn ? on delay time t d(on) v gs = 4.5 v, v dd = 10 v, i d = 1.0 a, r g = 6.0 6.7 ns rise time t r 12.7 turn ? off delay time t d(off) 13.2 fall time t f 11 drain ? source diode characteristics forward recovery voltage v sd v gs = 0 v, is = ? 0.8 a t j = 25 c ? 0.8 ? 1.2 v t j = 125 c ? 0.6 reverse recovery time t rr v gs = 0 v, d isd /d t = 100 a/ s, i s = ? 1.0 a 7.4 ns charge time t a 4.8 discharge time t b 2.6 reverse recovery time q rr 2.4 nc 6. switching characteristics are independent of operating junction temperatures. schottky diode electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test conditions min typ max unit maximum instantaneous forward voltage v f i f = 0.5 a 0.35 0.4 v i f = 1.0 a 0.4 0.45 maximum instantaneous reverse current i r v r = 10 v 15.7 200 a v r = 20 v 29.6 400
ntgf3123p http://onsemi.com 4 p ? channel 0 2 4 6 8 10 01234 i d , drain current (a) v ds , drain ? to ? source voltage (v) figure 1. on ? region characteristics v gs = 2.0 v 2.2 v 2.4 v 2.6 v 4.5 v 2.8 v 3.0 v t j = 25 c 3.5 v 4.0 v 0 2 4 6 8 10 012345 i d , drain current (a) v gs , gate ? to ? source voltage (v) figure 2. transfer characteristics t c = 25 c t c = ? 55 c t c = 125 c 0 0.2 0.4 0.6 0.8 2345 r ds(on) , drain ? to ? source resistance ( ) v gs , gate ? to ? source voltage (v) figure 3. on ? resistance versus gate ? to ? source voltage i d = 0.8 a 0 0.2 0.4 0.6 0.8 0246810 v gs = 2.5 v v gs = 3.0 v v gs = 4.5 v i d , drain current (a) figure 4. on ? resistance versus drain current and gate voltage r ds(on) , drain ? to ? source resistance ( ) v gs = 3.5 v 0.6 0.8 1 1.2 1.4 1.6 ? 50 ? 25 0 25 50 75 100 125 150 r ds(on) , drain ? to ? source resistance (normalized) t j , junction temperature ( c) figure 5. on ? resistance variation with temperature i d = 2.2 a v gs = 4.5 v 0 200 400 600 048121620 gate ? to ? source or drain ? to ? source voltage (v) figure 6. capacitance variation c, capacitance (pf) c iss c oss c rss t j = 25 c v gs = 0 v
ntgf3123p http://onsemi.com 5 p ? channel 0 1 2 3 4 5 01234 v gs , gate ? to ? source voltage (v) q g , total gate charge (nc) figure 7. gate ? to ? source and drain ? to ? source voltage versus total charge i d = 2.2 a t j = 25 c 1 10 100 1 10 100 t r t d(off) t d(on) t f v ds = 15 v i d = 30 a v gs = 4.5 v figure 8. resistive switching time variation versus gate resistance r g , gate resistance ( ) t, time (ns) 0.01 0.1 1 10 0.2 0.4 0.6 0.8 1 1.2 figure 9. diode forward voltage versus current v sd , source ? to ? drain voltage (v) i s , source current (a) v gs = 0 v t j = 150 c t j = 25 c 0.01 0.1 1 0 0.1 0.2 0.3 0.4 figure 10. schottky diode forward voltage versus current v sd , source ? to ? drain voltage (v) i s , source current (a) t j = 25 c t j = 125 c v gs = 0 v 1 10 100 1000 10000 100000 0 6 12 18 24 30 figure 11. schottky diode reverse current v ds , drain ? to ? source voltage (v) i dss , drain ? to ? source current ( a) t j = 125 c t j = 25 c t j = 85 c
ntgf3123p http://onsemi.com 6 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 figure 12. thermal response t, time (s) r (t) , normalized effective transient thermal resistance d = 0.5 0.2 0.1 0.05 0.02 0.1 single pulse ordering information device package shipping ? NTGF3123PT1G tsop6 (pb ? free) 3000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
ntgf3123p http://onsemi.com 7 package dimensions tsop ? 6 case 318g ? 02 issue s 23 4 5 6 d 1 e b e a1 a 0.05 (0.002) notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. dimensions a and b do not include mold flash, protrusions, or gate burrs. c l 0.95 0.037 1.9 0.075 0.95 0.037 mm inches scale 10:1 1.0 0.039 2.4 0.094 0.7 0.028 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* h e dim a min nom max min millimeters 0.90 1.00 1.10 0.035 inches a1 0.01 0.06 0.10 0.001 b 0.25 0.38 0.50 0.010 c 0.10 0.18 0.26 0.004 d 2.90 3.00 3.10 0.114 e 1.30 1.50 1.70 0.051 e 0.85 0.95 1.05 0.034 l 0.20 0.40 0.60 0.008 0.039 0.043 0.002 0.004 0.014 0.020 0.007 0.010 0.118 0.122 0.059 0.067 0.037 0.041 0.016 0.024 nom max 2.50 2.75 3.00 0.099 0.108 0.118 h e ? ? 0 1 0 0 1 0 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2 ? 9 ? 1 kamimeguro, meguro ? ku, tokyo, japan 153 ? 0051 phone : 81 ? 3 ? 5773 ? 3850 ntgf3123p/d fetky is a registered trademark of international rectifier corporation. literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082 ? 1312 usa phone : 480 ? 829 ? 7710 or 800 ? 344 ? 3860 toll free usa/canada fax : 480 ? 829 ? 7709 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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